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APT20M36BFLL APT20M36SFLL 200V 65A 0.036 BFLL D3PAK TO-247 POWER MOS 7 (R) R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg SFLL * Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package * FAST RECOVERY BODY DIODE D G S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 All Ratings: TC = 25C unless otherwise specified. APT20M36BFLL_SFLL UNIT Volts Amps 200 65 260 30 40 329 2.63 -55 to 150 300 65 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 200 0.036 250 1000 100 3 5 (VGS = 10V, ID = 32.5A) Ohms A nA Volts 7-2004 050-7048 Rev C Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol C iss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD dv/ dt APT20M36BFLL_ SFLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 100V ID = 65A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 100V ID = 65A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = 133V, VGS = 15V INDUCTIVE SWITCHING @ 125C VDD = 133V VGS = 15V ID = 65A, RG = 5 ID = 65A, RG = 5 RG = 1.6 Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 MIN TYP MAX UNIT pF 3080 990 70 60 24 26 9 37 16 30 490 300 600 315 MIN TYP MAX Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt 6 nC ns J SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts V/ns ns C Amps 65 260 1.3 8 Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN (Body Diode) (VGS = 0V, IS = -65A) 5 dv/ t rr Q rr IRRM Reverse Recovery Time (IS = -65A, di/dt = 100A/s) Reverse Recovery Charge (IS = -65A, di/dt = 100A/s) Peak Recovery Current (IS = -65A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient 200 300 0.7 2.4 10 18 TYP MAX THERMAL CHARACTERISTICS Symbol RJC RJA UNIT C/W 0.38 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25C, L = 0.62mH, RG = 25, Peak IL = 65A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID65A di/dt 700A/s VR 200V TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and inforation contained herein. 0.40 , THERMAL IMPEDANCE (C/W) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10-5 0.9 0.7 0.5 7-2004 Note: PDM t1 t2 0.3 050-7048 Rev C JC 0.1 0.05 10-4 Z SINGLE PULSE Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1 Typical Performance Curves 200 Junction temp. (C) APT20M36 BFLL_SFLL VGS=15V 10V ID, DRAIN CURRENT (AMPERES) RC MODEL 160 0.0329 0.00334F 120 9V Power (watts) 0.158 0.00802F 80 8V 7.5V 0.189 Case temperature. (C) 0.165F 40 7V 6.5V 6V FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.4 V NORMALIZED TO = 10V @ I = 32.5A D 0 140 ID, DRAIN CURRENT (AMPERES) 120 100 80 60 40 20 0 VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE GS 1.3 1.2 1.1 1.0 0.9 0.8 VGS=10V TJ = +25C TJ = +125C TJ = -55C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS VGS=20V 0 20 40 60 80 100 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 70 60 50 40 30 20 10 0 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 1.15 ID, DRAIN CURRENT (AMPERES) 1.10 1.05 1.00 0.95 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 25 0.90 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -50 2.5 I D 1.2 = 32.5A = 10V V GS 2.0 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.1 1.0 0.9 0.8 0.7 0.6 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE -50 -25 050-7048 Rev C 7-2004 260 100 OPERATION HERE LIMITED BY RDS (ON) 10,000 5,000 APT20M36 BFLL_SFLL Ciss ID, DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF) 50 100S 1,000 500 Coss 10 1mS 5 TC =+25C TJ =+150C SINGLE PULSE 5 10 50 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA D 100 50 Crss 10mS 1 1 16 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 14 12 10 8 6 4 2 50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 45 40 35 td(off) 0 0 VDS=40V VDS=100V VDS=160V IDR, REVERSE DRAIN CURRENT (AMPERES) I = 65A 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100 50 TJ =+150C TJ =+25C 10 0 10 5 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 120 V DD G = 133V R = 5 100 80 tr and tf (ns) T = 125C J L = 100H V DD G td(on) and td(off) (ns) 30 25 20 15 10 5 0 30 = 133V R = 5 T = 125C J L = 100H 60 40 20 0 30 tf tr td(on) 60 70 80 90 100 ID (A) FIGURE 14, DELAY TIMES vs CURRENT V DD G 40 50 60 70 80 90 100 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 1000 40 50 1200 = 133V R = 5 1000 SWITCHING ENERGY (J) T = 125C L = 100H SWITCHING ENERGY (J) J 800 Eon 600 Eoff 400 V I DD 800 600 400 200 0 30 EON includes diode reverse recovery. Eon = 133V 7-2004 D J = 65A Eoff 200 T = 125C L = 100H E ON includes diode reverse recovery. 050-7048 Rev C 60 70 80 90 100 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 40 50 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 0 5 Typical Performance Curves 90% 10% Gate Voltage TJ125C APT20M36 BFLL_SFLL Gate Voltage td(on) tr Drain Current 5% 10% Switching Energy 90% 5% Drain Voltage td(off) 90% T 125C J tf 10% 0 Drain Voltage Drain Current Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT60DS30 V DD ID V DS G D.U.T. Figure 20, Inductive Switching Test Circuit TO-247 Package Outline Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532) 3 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 1.04 (.041) 1.15 (.045) Drain 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) Revised 4/18/95 13.79 (.543) 13.99 (.551) Revised 8/29/97 11.51 (.453) 11.61 (.457) 0.46 (.018) 0.56 (.022) {3 Plcs} 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 19.81 (.780) 20.32 (.800) 1.22 (.048) 1.32 (.052) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Source Drain Gate Dimensions in Millimeters (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 050-7048 Rev C Gate Drain Source 5.45 (.215) BSC {2 Plcs.} Heat Sink (Drain) and Leads are Plated 7-2004 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 3.81 (.150) 4.06 (.160) (Base of Lead) |
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